LIGO Document G1700302-v1
- Cantilever ring-down method provides a convenient and fast turnaround means to measure the mechanical loss of thin films. Photo-lithographic method was commonly used to fabricate silicon cantilever from conventional silicon wafer, and the cantilever was one-side roughened due to the etching process. There are situations where both side of the silicon cantilever are required to be smooth such that coatings can be deposited on both side, for example, measuring the mechanical loss of high stress films, and coatings for the double end-mirror sloshing cavity . A silicon-on insulator (SOI) wafer is formed by firstly forming a thin SiO2 layers, either by thermal oxidation or by ion-implantation and thermal treatment, on a regular silicon wafer. Same method is then applied to form SiO2 layer on a thinner silicon wafer. Both wafers are then attached from the SiO2 layer side by wafer-bonding technique to form the silicon-on-insulator (SOI) wafer. Here we introduce a method to fabricate double-side smooth silicon cantilever from the silicon-on-insulator (SOI) wafers.
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